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The research is directed towards the growth and applications of GaN-based nanostructures for optoelectronic devices. Nanostructure fabrication will be carried out by molecular beam epitaxy. The unique properties of directly grown GaN-based nanowires and quantum dots will be utilized to boost the performance of light emitting- and photoelectrochemical devices. Tasks The selected candidate will perform the growth, characterization and evaluation of the device performance of the developed nanostructures. This challenging research covers a wide range from fundamental materials science to device applications, demanding innovative solutions. Requirements For this position we are looking for a highly motivated candidate with a PhD degree and a strong record in experimental condensed-matter physics or physical chemistry. Previous experience with epitaxial growth or related deposition techniques, preferably molecular beam epitaxy and the characterization of semiconductor nanostructures is requi
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